Ion Implantation in Semiconductors 1976

Ionization‐enhanced diffusion: Ion implantation in semiconductors

Ion Implantation-Induced Layer Splitting of Semiconductors

Amorphization of elemental and compound semiconductors upon ion implantation

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...

Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement

Article history: Received 25 May 2015 Accepted 4 June 2015 Available online xxxx

Modulated Interference Effects and Thermal Wave Monitoring of High-dose Ion Implantation in Semiconductors

Under sufficiently high dose and energy, ions implanted into a semiconductor will produce an amorphous layer throughout the range in which nuclear stopping is the dominant mechanism for slowing the ions. In arsenic implanted silicon, for example, this corresponds to doses greater than 1014ions/cm2 and energies above 10 keV. Using a model for thermal and plasma wave-induced modulated reflectance...